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Additional info for Advances in Infrared Photodetectors
Since the absorption QE serves as an upper limit of the external QE (unless there is a gain in the structure), the difference between these QEs indicates that not all photogenerated carriers reach the contacts. 15 V. To achieve a high collection efficiency of excited carriers the minority carrier lifetime should be long. The minority carrier lifetime is dependent on the radiative lifetime (τ R ), as well as the nonradiative lifetime (τ nR ). The nonradiative lifetime is influenced by several different recombination processes of which the most important ones are the Shockley-Read-Hall (SRH) recombination, Auger processes, and surface recombination.
2002). Absorption spectroscopy is a straightforward technique for extracting essential parameters about the detector performance, such as absorption quantum efficiency and spectral response. , 2010). As described below, by combining absorption spectroscopy with the information gained from PL and EL, a good indication of the attainable performance of detectors fabricated from the studied material can be obtained. Good IR detector material is characterized by high-absorption quantum efficiency (QEa ) and a long lifetime of the minority carriers (τ ).
16 illustrates the energy band diagrams of some idealized examples of the type-II superlattice-based infrared detectors that make use of unipolar barriers. Broadly speaking, they are based on either the nBn/pBp/XBn architecture (Klipstein, 2008; Maimon, 2010; Maimon and Wicks, 2003, 2006) or the variations of the double heterostructure design. , 2007) in which an LWIR superlattice and an MWIR superlattice are separated by an AlGaSb unipolar barrier. , 2007). , 2010). , 2008). , 2010a). -Y. Ting et al.